Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator.
نویسندگان
چکیده
The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e(2), accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.
منابع مشابه
Flow of Transport Coefficients in a Film That Shows the Quantum Anomalous Hall Effect. " Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator " , Arxiv: 1406.7450
The observation of the quantum anomalous Hall effect in a ferromagnetic topological insulator, first reported by experimenters in Beijing last year[1], has attracted considerable attention, including a Journal Club Commentary by Leonid Glazman in July 2013. The new e-print by Checkelsky et al. reports experiments by a Japanese group, which further explore the properties of this fascinating syst...
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ورودعنوان ژورنال:
- Science
دوره 340 6129 شماره
صفحات -
تاریخ انتشار 2013